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STP75NE75

Features: ` TYPICAL RDS(on) = 0.01 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATIONORIENTED CHARACTERIZATIONApplication·SOLENOID AND RELAY DRIVERS·DC MOTOR CONTROL, AUDIO AMPLIFIERS·DC-DC CONVERTERS·AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit STP75...

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SeekIC No. : 004508515 Detail

STP75NE75: Features: ` TYPICAL RDS(on) = 0.01 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATIONORIENTED CHARACTERIZATIONApplication·SOLENOID AND RELAY DRIVERS·DC MOTOR CONTROL, AUDIO AMPLIFIER...

STP75NE75 Data Sheet

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Part Number:
STP75NE75
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

` TYPICAL RDS(on) = 0.01
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATIONORIENTED CHARACTERIZATION


Application

·SOLENOID AND RELAY DRIVERS
·DC MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT


Specifications

Symbol Parameter Value Unit
STP75NE75 STP75NE75FP
VDS Drain-source Voltage (VGS = 0) 75 V
VDGR Drain- gate Voltage (RGS = 20 k) 75 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 75 40 A
ID Drain Current (continuous) at Tc = 100 63 28 A
IDM(`) Drain Current (pulsed) 300 160 A
Ptot Total Dissipation at Tc = 25 160 50 W
  Derating Factor 1.06 0.37 W/
VISO Insulation Withstand Voltage (DC) - 2000 V
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power MOSFET STP75NE75 is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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