Position: Home  > All Categories> Integrated Circuits (ICs) > STP75NE75

STP75NE75

Features: ` TYPICAL RDS(on) = 0.01 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATIONORIENTED CHARACTERIZATIONApplication·SOLENOID AND RELAY DRIVERS·DC MOTOR CONTROL, AUDIO AMPLIFIERS·DC-DC CONVERTERS·AUTOMOTIVE ENVIRONMENTSpecifications Symbol Parameter Value Unit STP75...

product image

STP75NE75 Picture
See larger image
SeekIC No. : 004508515 Detail

STP75NE75: Features: ` TYPICAL RDS(on) = 0.01 ` EXCEPTIONAL dv/dt CAPABILITY` 100% AVALANCHE TESTED` APPLICATIONORIENTED CHARACTERIZATIONApplication·SOLENOID AND RELAY DRIVERS·DC MOTOR CONTROL, AUDIO AMPLIFIER...

STP75NE75 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STP75NE75
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/11/24

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

` TYPICAL RDS(on) = 0.01
` EXCEPTIONAL dv/dt CAPABILITY
` 100% AVALANCHE TESTED
` APPLICATIONORIENTED CHARACTERIZATION


Application

·SOLENOID AND RELAY DRIVERS
·DC MOTOR CONTROL, AUDIO AMPLIFIERS
·DC-DC CONVERTERS
·AUTOMOTIVE ENVIRONMENT


Specifications

Symbol Parameter Value Unit
STP75NE75 STP75NE75FP
VDS Drain-source Voltage (VGS = 0) 75 V
VDGR Drain- gate Voltage (RGS = 20 k) 75 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 75 40 A
ID Drain Current (continuous) at Tc = 100 63 28 A
IDM(`) Drain Current (pulsed) 300 160 A
Ptot Total Dissipation at Tc = 25 160 50 W
  Derating Factor 1.06 0.37 W/
VISO Insulation Withstand Voltage (DC) - 2000 V
dv/dt Peak Diode Recovery voltage slope 7 V/ns
Tstg Storage Temperature -65 to 175
Tj Max. Operating Junction Temperature 175



Description

This Power MOSFET STP75NE75 is the latest development of STMicroelectronics unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
RF and RFID
X3C26P1-30S
1P620S
Prototyping Products
AVT4168
DE1
Circuit Protection
A50QS75-4Y
F-17*77
Connectors, Interconnects
ASP-134488-01
WM4078-ND
Switches
US32DMRJ
HBGQ22P-11ET
Discrete Semiconductor Products
T508N12TOF
MUR20040
View more