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STP5N120

MOSFET N-Ch, 1200V-2.8ohms 4.4A

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SeekIC No. : 00159696 Detail

STP5N120: MOSFET N-Ch, 1200V-2.8ohms 4.4A

STP5N120 Data Sheet

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Part Number:
STP5N120
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Processing time
  • 15 Days
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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 1200 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 4.7 A
Resistance Drain-Source RDS (on) : 3.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 1200 V
Continuous Drain Current : 4.7 A
Resistance Drain-Source RDS (on) : 3.5 Ohms


Parameters:

Technical/Catalog InformationSTP5N120
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)1200V (1.2kV)
Current - Continuous Drain (Id) @ 25° C4.4A
Rds On (Max) @ Id, Vgs3.5 Ohm @ 2.3A, 10V
Input Capacitance (Ciss) @ Vds 120pF @ 25V
Power - Max160W
PackagingTube
Gate Charge (Qg) @ Vgs55nC @ 10V
Package / CaseTO-220
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP5N120
STP5N120
497 8811 5 ND
49788115ND
497-8811-5



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