STP55NF06L

MOSFET N-Ch 60 Volt 55 Amp

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SeekIC No. : 00147724 Detail

STP55NF06L: MOSFET N-Ch 60 Volt 55 Amp

floor Price/Ceiling Price

US $ .55~.89 / Piece | Get Latest Price
Part Number:
STP55NF06L
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $.89
  • $.74
  • $.61
  • $.55
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V Continuous Drain Current : 55 A
Resistance Drain-Source RDS (on) : 18 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 16 V
Resistance Drain-Source RDS (on) : 18 mOhms
Continuous Drain Current : 55 A


Application

HIGH CURRENT, HIGH SPEED SWITCHING
 MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)



Specifications

Symbol
Parameter
Value
Unit
 
STP55NF06L
STB55NF06L/-1
STP55NF06LFP
VDS
Drain-source Voltage (VGS = 0)
60
VDGR
Drain-gate Voltage (RGS = 20 k)
60
V
VGS
Gate- source Voltage
± 16
V
ID
Drain Current (continuous) at TC = 25°C
55
30
V
ID
Drain Current (continuous) at TC = 100°C
39
21
A
IDM ()
Drain Current (pulsed)
220
120
A
PTOT
Total Dissipation at TC = 25°C
95
30
A
 
Derating Factor
0.63
0.2
W
dv/dt (2)
Peak Diode Recovery voltage slope
20
W/°C
EAS (1)
Single Pulse Avalanche Energy
300
V/ns
VISO
Insulation Withstand Voltage (DC)
2500
mJ
Tstg
Storage Temperature
55 to 175
V
Tj
Max. Operating Junction Temperature
55 to 175
°C



Description

This Power Mosfet STP55NF06L is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Parameters:

Technical/Catalog InformationSTP55NF06L
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C55A
Rds On (Max) @ Id, Vgs18 mOhm @ 27.5A, 10V
Input Capacitance (Ciss) @ Vds 1700pF @ 25V
Power - Max95W
PackagingTube
Gate Charge (Qg) @ Vgs37nC @ 4.5V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP55NF06L
STP55NF06L
497 6742 5 ND
49767425ND
497-6742-5



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