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STP30NS15LFP

ApplicationSWITCHING S CAPACITORSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 150 V VDGR Drain- gate Voltage (RGS = 20 k) 150 V VGS Gate-Source Voltage ±15 V ID Drain Current (continuous) at Tc =...

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SeekIC No. : 004508391 Detail

STP30NS15LFP: ApplicationSWITCHING S CAPACITORSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 150 V VDGR Drain- gate Voltage (RGS = 20 k) 1...

STP30NS15LFP Data Sheet

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Part Number:
STP30NS15LFP
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/23

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Product Details

Description



Application

SWITCHING "S" CAPACITOR


Specifications

Symbol
Parameter
Value
Unit
VDS
Drain-source Voltage (VGS = 0)
150
V
VDGR
Drain- gate Voltage (RGS = 20 k)
150
V
VGS
Gate-Source Voltage
± 15
V
ID
Drain Current (continuous) at Tc = 25
10
A
ID Drain Current (continuous) at Tc = 100 7 A
IDM(`)
Drain Current (pulsed)
40
A
PTOT
Total Dissipation at Tc = 25
30
W
Derating Factor
0.2
W/
EAS(1)
Gate source ESD(HBM-C=100pF, R=1.5KW)
300
mJ
dv/dt (2)
Peak Diode Recovery voltage slope
2.4
V/ns
Tstg
Storage Temperature
-55 to 150
Tj
Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area (1)ISD35A, di/dt 300A/µs, VDD V(BR)DSS, Tj TJMAX.
(2) Starting Tj = 25 , ID = 15A, VDD = 75V


Description

Using the latest high voltage STP30NS15LFP MESH OVERLAY™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company's proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics.




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