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STP300NH02L

MOSFET N Ch 600V 19A Pwr MESH IGBT

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SeekIC No. : 00165721 Detail

STP300NH02L: MOSFET N Ch 600V 19A Pwr MESH IGBT

STP300NH02L Data Sheet

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Part Number:
STP300NH02L
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 120 A
Resistance Drain-Source RDS (on) : 0.0022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Continuous Drain Current : 120 A
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220
Resistance Drain-Source RDS (on) : 0.0022 Ohms
Drain-Source Breakdown Voltage : 24 V


Features:

RDS(on)*Qg industry's benchmark
Conduction losses reduced
Switching losses reduced
Low profile, very low parasitic inductance


Application

Switching application
Specifically designed and optimized for high efficiency DC/DC converters
OR-ing


Specifications

Symbol Parameter Value Unit
VDS Drain-source voltage (VGS = 0)
 24 V
VGS Gate-source voltage ± 20 V
ID(1) Drain current (continuous) at TC = 25°C 120 A
ID(1) Drain current (continuous) at TC = 100°C 120 A
IDM(2) Drain current (pulsed) 480 A
PTOT(3) Total dissipation at TC = 25°C 300 W
  Derating factor 2 W/°C
Tj Operating junction temperature -55 to 175 °C
1. This value is limited by package
2. Pulse width limited by safe operating area
3. This value is rated according Rthj-case


Description

This product STP300NH02L utilizes the latest advanced design rules of ST's proprietary STripFET™ technology. This is suitable for high current OR-ing application.




Parameters:

Technical/Catalog InformationSTP300NH02L
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)24V
Current - Continuous Drain (Id) @ 25° C120A
Rds On (Max) @ Id, Vgs2.2 mOhm @ 80A, 10V
Input Capacitance (Ciss) @ Vds 7055pF @ 15V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs109.4nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureLogic Level Gate
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STP300NH02L
STP300NH02L
497 7519 5 ND
49775195ND
497-7519-5



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