STP30NM60ND, US $ 3.32-5.2 , STMicroelectronics, STP30NM60ND DataSheet download, circuit diagram from SeekIC.com

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STP30NM60ND: MOSFET N-channel 600V, 25A FDMesh II

STP30NM60ND Data Sheet

US $ 3.32~5.2 / Piece | Get Latest Price

Part Number:: STP30NM60ND
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	25 A
Resistance Drain-Source RDS (on) :	0.13 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	Through Hole
Package / Case :	TO-247	Packaging :	Tube

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-247
Continuous Drain Current : 25 A
Resistance Drain-Source RDS (on) : 0.13 Ohms
Gate-Source Breakdown Voltage : +/- 25 V

Parameters:

Technical/Catalog Information	STP30NM60ND
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	25A
Rds On (Max) @ Id, Vgs	130 mOhm @ 12.5A, 10V
Input Capacitance (Ciss) @ Vds	2800pF @ 50V
Power - Max	190W
Packaging	Tube
Gate Charge (Qg) @ Vgs	100nC @ 10V
Package / Case	TO-220-3 (Straight Leads)
FET Feature	Standard
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STP30NM60ND STP30NM60ND 497 8448 5 ND 49784485ND 497-8448-5

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STP30NM60ND

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