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STN4NE03L

Features: TYPICAL RDS(on) = 0.037 EXCEPTIONAL dv/dt CAPABILITY AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED HARACTERIZATIONApplicationDC MOTOR CONTROL (DISK DRIVES, etc.)DC-DC & DC-AC CONVERTERSSYNCHRONOUS RECTIFICATIONPOWER MANAGEMENT IN ATTERY-OPERATED AND PORTABLE ...

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STN4NE03L: Features: TYPICAL RDS(on) = 0.037 EXCEPTIONAL dv/dt CAPABILITY AVALANCHERUGGED TECHNOLOGY 100% AVALANCHE TESTED APPLICATION ORIENTED HARACTERIZATIONApplicationDC MOTOR CONTROL (DISK DRIVES, etc.)DC...

STN4NE03L Data Sheet

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Part Number:
STN4NE03L
Supply Ability:
5000

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  • 1~5000
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.037
EXCEPTIONAL dv/dt CAPABILITY
AVALANCHERUGGED TECHNOLOGY
100% AVALANCHE TESTED
APPLICATION ORIENTED HARACTERIZATION


Application

DC MOTOR CONTROL (DISK DRIVES, etc.)
DC-DC & DC-AC CONVERTERS
SYNCHRONOUS RECTIFICATION
POWER MANAGEMENT IN ATTERY-OPERATED AND PORTABLE QUIPMENT


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 30 V
VDGR Drain-gate Voltage (RGS = 20 k ) 30 V
VGS Gate- source Voltage ± 15 V
ID(*) Drain Current (continuos) at TC = 25
 4 A
ID(*) Drain Current (continuos) at TC = 100 2.5 A
IDM() Drain Current (pulsed) 16 A
PTOT Total Dissipation at TC = 25 2.5 W
  Derating Factor 0.02 W/
dv/dt(1) Peak Diode Recovery voltage slope 6 mJ
Tstg Storage Temperature 65 to 150 °C
Tj Max. Operating Junction Temperature 150
(•) Pulse width limited by safe operating area (*) Limited by package (1)ISD  10A, di/dt  200A/s, VDD V(BR)DSS, Tj  TjMAX


Description

This Power MOSFET STN4NE03L is the latest development ofSTMicroelectronics unique " Single FeatureSize]  "  strip-based process. The resultingtransistor shows extremely high packing densityfor low on-resistance, rugged avalanche aracteristics and less critical alignment stepstherefore a remarkable manufacturingreproducibility.




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