Features: TYPICAL RDS(on) = 0.045EXCEPTIONAL dv/dt CAPABILITYAVALANCHERUGGED TECHNOLOGY100% AVALANCHE TESTEDAPPLICATION ORIENTED HARACTERIZATIONApplicationDC MOTOR CONTROL (DISK DRIVES, etc.) DC-DC & DC-AC CONVERTERS SYNCHRONOUS RECTIFICATION POWER MANAGEMENT INBATTERY-OPERATED AND PORTABLE QU...
STN4NE03: Features: TYPICAL RDS(on) = 0.045EXCEPTIONAL dv/dt CAPABILITYAVALANCHERUGGED TECHNOLOGY100% AVALANCHE TESTEDAPPLICATION ORIENTED HARACTERIZATIONApplicationDC MOTOR CONTROL (DISK DRIVES, etc.) DC-DC ...
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Symbol | Parameter | Value | Unit |
VDS | Drain-source Voltage (VGS = 0) | 30 | V |
VDGR | Drain-gate Voltage (RGS = 20 k ) | 30 | V |
VGS | Gate- source Voltage | ± 20 | V |
ID(*) | Drain Current (continuos) at TC = 25 |
4 | A |
ID(*) | Drain Current (continuos) at TC = 100 | 2.5 | A |
IDM() | Drain Current (pulsed) | 16 | A |
PTOT | Total Dissipation at TC = 25 | 2.5 | W |
Derating Factor | 0.02 | W/ | |
dv/dt(1) | Peak Diode Recovery voltage slope | 6 | mJ |
Tstg | Storage Temperature | 65 to 150 | |
Tj | Max. Operating Junction Temperature | 150 |
(•) Pulse width limited by safe operating area (*) Limited by package (1)ISD10A, di/dt 300A/ s, VDD V(BR)DSS, Tj TjMAX
This Power MOSFET STN4NE03 is the latest development ofSTMicroelectronics unique " Single FeatureSize] " strip-based process. The resultingtransistor shows extremely high packing densityfor low on-resistance, rugged avalanche haracteristics and less critical alignment stepstherefore a remarkable manufacturingreproducibility.