STL35NF3LL

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Configuration : Single Quad Drain Triple Source
Gate-Source Breakdown Voltage : +/- 15 V
Continuous Drain Current : 35 A
Package / Case : PowerFLAT
Resistance Drain-Source RDS (on) : 0.007 Ohms


Features:

 TYPICAL RDS(on) = 0.0055
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE


Application

 DC-DC CONVERTERS
BATTERY MANAGEMENT IN NOMADIC EQUIPMENT


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain-gate Voltage (RGS = 20 k )	30	V
VGS	Gate- source Voltage	± 15	V
ID(#)	Drain Current (continuos) at TC = 25 Drain Current (continuos) at TC = 100	35 22	A A
IDM()	Drain Current (pulsed)	140	A
PTOT(2)	Total Dissipation at TC = 25(Steady State)	80	W
	Derating Factor(2)	0.64	W/
dv/dt(1)	Peak Diode Recovery voltage slope	TBD	V/ns
EAS (2)	Single Pulse Avalanche Energy	TBD	J
Tstg	Storage Temperature	55 to 150
Tj	Max. Operating Junction Temperature

() Pulse width limited by safe operating area
(#) Limited by Wire Bonding
(1)I_SD<35A, di/dt<300A/s, V_DD<V_(BR)DSS, T_J<T_JMAX
(2) Starting T_j = 25, I_D = 30A, V_DD = 27.5V


Description

This Power MOSFET STL35NF3LL is the second generation of STMicroelectronics unique "STripFET™" technology.The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT ™ package allows a significant reduction in board space without compromising performance.