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STL34NF06

Features: TYPICAL RDS(on) = 0.024 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGEApplicationDC-DC CONVERTERSBATTERY MANAGEMENT IN NOMADIC EQUIPMENTSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 60 V VDGR Drain-gate Voltage (RGS = 20 k ) ...

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SeekIC No. : 004508063 Detail

STL34NF06: Features: TYPICAL RDS(on) = 0.024 IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGEApplicationDC-DC CONVERTERSBATTERY MANAGEMENT IN NOMADIC EQUIPMENTSpecifications Symbol Parameter Val...

STL34NF06 Data Sheet

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Part Number:
STL34NF06
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

 TYPICAL RDS(on) = 0.024
IMPROVED DIE-TO-FOOTPRINT RATIO
VERY LOW PROFILE PACKAGE


Application

 DC-DC CONVERTERS
 BATTERY MANAGEMENT IN NOMADIC EQUIPMENT


Specifications

Symbol Parameter Value Unit
VDS Drain-source Voltage (VGS = 0) 60 V
VDGR Drain-gate Voltage (RGS = 20 k ) 60 V
VGS Gate- source Voltage ± 20 V
ID Drain Current (continuos) at TC = 25(*)
Drain Current (continuos) at TC = 100		 34
20		 A
A
IDM(•) Drain Current (pulsed) 136 A
PTOT Total Dissipation at TC = 25 70 W
Derating Factor 0.56 W/
EAS (1) Single Pulse Avalanche Energy 250 mJ
Tstg Storage Temperature 55 to 150
Tj Max. Operating Junction Temperature
(•)Pulse width limited by safe operating area
(*) Current Limited by Wire Bonding is 20A
(1) Starting Tj = 25°C, ID = 17A, VDD = 42V


Description

This STL34NF06 Power MOSFET is the second generation of STMicroelectronics unique "STripFET™" technology.The resulting transistor shows extremely low onresistance and minimal gate charge. The new PowerFLAT ™ package allow a significant reduction in board space without compramising performance.




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