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STI23NM60N

MOSFET N-Channel 600V Pwr Mosfet

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SeekIC No. : 00163206 Detail

STI23NM60N: MOSFET N-Channel 600V Pwr Mosfet

STI23NM60N Data Sheet

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Part Number:
STI23NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/24

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Product Details

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Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Package / Case : I2PAK
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.18 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Parameters:

Technical/Catalog InformationSTI23NM60N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs180 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds 2050pF @ 50V
Power - Max150W
PackagingTube
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STI23NM60N
STI23NM60N



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