STI22NM60N, US $ 1.3-2.84, STI22NM60N DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 003430563 Detail

STI22NM60N: MOSFET N-CH 30V 16A I2PAK

STI22NM60N Data Sheet

US $ 1.3~2.84 / Piece | Get Latest Price

Part Number:: STI22NM60N
Mfg:
Supply Ability:: 5000

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$2.84
$2.54
$2.28
$2.08
$1.88
$1.68
$1.42
$1.35
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Upload time: 2024/12/27

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US $1.96 - 2.98 / Piece

MOSFET N-channel 650 V, 0.1 50 Ohm, 17 A MDmesh

Product Details

Quick Details

Series:	Mdmesh™ II	Manufacturer:	STMicroelectronics
FET Type:	MOSFET N-Channel, Metal Oxide	Transistor Type:	-
Gain :	19.5 dB	Current - Collector (Ic) (Max):	-
FET Feature:	Standard	Drain to Source Voltage (Vdss):	30V
Voltage - Collector Emitter Breakdown (Max):	-	Current - Continuous Drain (Id) @ 25° C:	16A
Vce Saturation (Max) @ Ib, Ic:	-	Current - Collector Cutoff (Max):	-
Rds On (Max) @ Id, Vgs:	220 mOhm @ 8A, 10V	DC Current Gain (hFE) (Min) @ Ic, Vce:	-
Vgs(th) (Max) @ Id:	4V @ 250µA	Gate Charge (Qg) @ Vgs:	44nC @ 10V
Frequency - Transition:	-	Input Capacitance (Ciss) @ Vds:	1330pF @ 50V
Power - Max:	125W	Mounting Type:	Through Hole
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA	Supplier Device Package:	I2PAK

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Drain to Source Voltage (Vdss): 30V
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Current - Continuous Drain (Id) @ 25° C: 16A
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) @ Vgs: 44nC @ 10V
Packaging: Tube
Mounting Type: Through Hole
Power - Max: 125W
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Manufacturer: STMicroelectronics
Input Capacitance (Ciss) @ Vds: 1330pF @ 50V
Series: Mdmesh™ II
Rds On (Max) @ Id, Vgs: 220 mOhm @ 8A, 10V

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STI22NM60N

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