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STI20NM65N

MOSFET N-Channel 650V Pwr Mosfet

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SeekIC No. : 00166719 Detail

STI20NM65N: MOSFET N-Channel 650V Pwr Mosfet

STI20NM65N Data Sheet

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Part Number:
STI20NM65N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 650 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.19 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : Through Hole
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Resistance Drain-Source RDS (on) : 0.19 Ohms
Continuous Drain Current : 19 A
Gate-Source Breakdown Voltage : +/- 25 V
Package / Case : TO-262


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