STI17NF25

MOSFET N-Channel 250V Pwr Mosfet

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SeekIC No. : 00161603 Detail

STI17NF25: MOSFET N-Channel 250V Pwr Mosfet

floor Price/Ceiling Price

Part Number:
STI17NF25
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 250 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.165 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-262 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 250 V
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.165 Ohms
Package / Case : TO-262


Parameters:

Technical/Catalog InformationSTI17NF25
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)250V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs165 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds 1000pF @ 25V
Power - Max90W
PackagingTube
Gate Charge (Qg) @ Vgs29.5nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STI17NF25
STI17NF25



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