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STI10N62K3

MOSFET N-CH 60V 8.4A I2PAK

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SeekIC No. : 003432571 Detail

STI10N62K3: MOSFET N-CH 60V 8.4A I2PAK

STI10N62K3 Data Sheet

floor Price/Ceiling Price

US $ .55~1.3 / Piece | Get Latest Price
Part Number:
STI10N62K3
Mfg:
Supply Ability:
5000

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  • $1.3
  • $1.18
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  • $.57
  • $.55
  • Processing time
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Total Cost: $ 0.00

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Product Details

Quick Details

Series: SuperMESH3™ Manufacturer: STMicroelectronics
FET Type: MOSFET N-Channel, Metal Oxide Transistor Type: -
Gain : 19.5 dB Current - Collector (Ic) (Max): -
FET Feature: Standard Drain to Source Voltage (Vdss): 620V
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 8.4A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 750 mOhm @ 4A, 10V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 4.5V @ 100µA Gate Charge (Qg) @ Vgs: 42nC @ 10V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 1250pF @ 50V
Power - Max: 125W Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Supplier Device Package: I2PAK    

Description

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
FET Feature: Standard
Vgs(th) (Max) @ Id: 4.5V @ 100µA
Gate Charge (Qg) @ Vgs: 42nC @ 10V
Current - Continuous Drain (Id) @ 25° C: 8.4A
Packaging: Tube
Mounting Type: Through Hole
Input Capacitance (Ciss) @ Vds: 1250pF @ 50V
Power - Max: 125W
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Supplier Device Package: I2PAK
Manufacturer: STMicroelectronics
Series: SuperMESH3™
Drain to Source Voltage (Vdss): 620V
Rds On (Max) @ Id, Vgs: 750 mOhm @ 4A, 10V


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