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STI16NM50N

MOSFET N-Channel 500V Pwr Mosfet

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SeekIC No. : 00162841 Detail

STI16NM50N: MOSFET N-Channel 500V Pwr Mosfet

STI16NM50N Data Sheet

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Part Number:
STI16NM50N
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 15 A
Resistance Drain-Source RDS (on) : 0.26 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Continuous Drain Current : 15 A
Package / Case : I2PAK
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.26 Ohms


Parameters:

Technical/Catalog InformationSTI16NM50N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)500V
Current - Continuous Drain (Id) @ 25° C15A
Rds On (Max) @ Id, Vgs260 mOhm @ 7.5A, 10V
Input Capacitance (Ciss) @ Vds 1200pF @ 50V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs38nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STI16NM50N
STI16NM50N



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