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STI15NM60N

MOSFET N Ch 600V 0.270 ohm 14A

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SeekIC No. : 00160758 Detail

STI15NM60N: MOSFET N Ch 600V 0.270 ohm 14A

STI15NM60N Data Sheet

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Part Number:
STI15NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/12/26

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 14 A
Resistance Drain-Source RDS (on) : 0.299 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.299 Ohms
Continuous Drain Current : 14 A
Gate-Source Breakdown Voltage : +/- 25 V


Parameters:

Technical/Catalog InformationSTI15NM60N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C14A
Rds On (Max) @ Id, Vgs299 mOhm @ 7A, 10V
Input Capacitance (Ciss) @ Vds 1250pF @ 50V
Power - Max125W
PackagingTube
Gate Charge (Qg) @ Vgs37nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STI15NM60N
STI15NM60N



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