IGBT Transistors N-chnl 50A-600V PowerMESH
STGE50NC60VD: IGBT Transistors N-chnl 50A-600V PowerMESH
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Configuration : | Single Dual Emitter | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | ISOTOP-4 | Packaging : | Tube |
Technical/Catalog Information | STGE50NC60VD |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 90A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 40A |
Power - Max | 260W |
Mounting Type | Chassis Mount |
Package / Case | ISOTOP |
Packaging | Tube |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STGE50NC60VD STGE50NC60VD 497 7011 5 ND 49770115ND 497-7011-5 |