STGE200NB60S

Collector- Emitter Voltage VCEO Max : 600 V
Maximum Operating Temperature : + 150 C
Packaging : Tube
Maximum Gate Emitter Voltage : +/- 20 V
Power Dissipation : 600 W
Continuous Collector Current at 25 C : 200 A
Gate-Emitter Leakage Current : +/- 100 nA
Collector-Emitter Saturation Voltage : 1.2 V
Configuration : Single Dual Emitter
Package / Case : ISOTOP-4


Application

 LOW FREQUENCY MOTOR CONTROLS
 ALUMINUM WELDING EQUIPMENT


Specifications

Symbol	Parameter	Value	Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600	V
VGE	Gate-Emitter Voltage	± 20	V
IC	Collector Current (continuous) at Tc = 25 oC	200	A
IC	Collector Current (continuous) at Tc = 100 oC	150	A
ICM(•)	Collector Current (pulsed)	400	A
Ptot	Total Dissipation at Tc = 25 oC	600	W
	Derating Factor	4.8	W/oC
Tstg	Storage Temperature	65 to 150	oC
Tj	Operating Junction Temperature	150	oC

Description

Using the latest high voltage technology based on a patented strip layout, STGE200NB60S STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix "S" identifies a family optimized to achieve very low VCE(sat) (@ max frequency of 1KHz).