STGE50NB60HD

Configuration: Single
Voltage - Collector Emitter Breakdown (Max): 600V
Input: Standard
NTC Thermistor: No
Mounting Type: Chassis Mount
IGBT Type: -
Package / Case: ISOTOP
Current - Collector (Ic) (Max): 100A
Current - Collector Cutoff (Max): 250µA
Series: PowerMESH™
Manufacturer: STMicroelectronics
Supplier Device Package: ISOTOP
Input Capacitance (Cies) @ Vce: 4.5nF @ 25V
Power - Max: 300W
Vce(on) (Max) @ Vge, Ic: 2.8V @ 15V, 50A


Application

 HIGH FREQUENCY MOTOR CONTROLS
 WELDING EQUIPMENTS
 SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES


Specifications

Symbol	Parameter	Value		Unit
VCES	Collector-Emitter Voltage (VGS = 0)	600		V
VGE	Gate-Emitter Voltage	± 20		V
IC	Collector Current (continuous) at Tc = 25 oC	100		A
IC	Collector Current (continuous) at Tc = 100 oC	50		A
ICM(•)	Collector Current (pulsed)	400		A
Ptot	Total Dissipation at Tc = 25 oC	300		W
	Derating Factor	2.4		W/oC
Tstg	Storage Temperature	-65 to 150		oC
Tj	Max.Operating Junction Temperature	150		oC

Description

Using the latest high voltage technology based on a patented strip layout, STGE50NB60HD STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH] IGBTs, with outstanding perfomances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).