STGB6NC60HDT4, US $ .4-.61 , STMicroelectronics, STGB6NC60HDT4 DataSheet download, circuit diagram from SeekIC.com

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STGB6NC60HDT4: IGBT Transistors PowerMESH TM IGBT

STGB6NC60HDT4 Data Sheet

US $ .4~.61 / Piece | Get Latest Price

Part Number:: STGB6NC60HDT4
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Product Details

Quick Details

Configuration :	Single	Collector- Emitter Voltage VCEO Max :	600 V
Collector-Emitter Saturation Voltage :	2.7 V	Maximum Gate Emitter Voltage :	+/- 20 V
Gate-Emitter Leakage Current :	100 nA	Power Dissipation :	80 W
Maximum Operating Temperature :	+ 150 C	Package / Case :	D2PAK-3
Packaging :	Reel

Description

Continuous Collector Current at 25 C :
Collector- Emitter Voltage VCEO Max : 600 V
Gate-Emitter Leakage Current : 100 nA
Maximum Operating Temperature : + 150 C
Configuration : Single
Packaging : Reel
Maximum Gate Emitter Voltage : +/- 20 V
Collector-Emitter Saturation Voltage : 2.7 V
Package / Case : D2PAK-3
Power Dissipation : 80 W

Parameters:

Technical/Catalog Information	STGB6NC60HDT4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Input Type	-
Voltage - Collector Emitter Breakdown (Max)	600V
Current - Collector (Ic) (Max)	15A
Vce(on) (Max) @ Vge, Ic	-
Power - Max	-
Mounting Type	Surface Mount
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
Packaging	Tape & Reel (TR)
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STGB6NC60HDT4 STGB6NC60HDT4 497 5110 2 ND 49751102ND 497-5110-2

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STGB6NC60HDT4

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