IGBT Transistors N-Ch Clamped 20 Amp
STGB10NB40LZT4: IGBT Transistors N-Ch Clamped 20 Amp
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 1.8 V | ||
Collector-Emitter Saturation Voltage : | 1.2 V | Maximum Gate Emitter Voltage : | 12 V | ||
Continuous Collector Current at 25 C : | 20 A | Gate-Emitter Leakage Current : | 700 uA | ||
Power Dissipation : | 150 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | D2PAK-3 | Packaging : | Reel |
Technical/Catalog Information | STGB10NB40LZT4 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Input Type | Logic |
Voltage - Collector Emitter Breakdown (Max) | 440V |
Current - Collector (Ic) (Max) | 20A |
Vce(on) (Max) @ Vge, Ic | 1.8V @ 4.5V, 10A |
Power - Max | 150W |
Mounting Type | Surface Mount |
Package / Case | D²Pak, TO-263 (2 leads + tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | STGB10NB40LZT4 STGB10NB40LZT4 497 4349 2 ND 49743492ND 497-4349-2 |