IGBT Transistors N-Ch 600 Volt 3.0 A
STGB3NB60FDT4: IGBT Transistors N-Ch 600 Volt 3.0 A
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Collector-Emitter Saturation Voltage : | 2.4 V | Maximum Gate Emitter Voltage : | +/- 20 V | ||
Continuous Collector Current at 25 C : | 3 A | Gate-Emitter Leakage Current : | 100 nA | ||
Power Dissipation : | 68 W | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | D2PAK-3 | Packaging : | Reel |
Technical/Catalog Information | STGB3NB60FDT4 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 6A |
Vce(on) (Max) @ Vge, Ic | 2.4V @ 15V, 3A |
Power - Max | 68W |
Mounting Type | Surface Mount |
Package / Case | D²Pak, TO-263 (2 leads + tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Contains Lead |
RoHS Status | RoHS Non-Compliant |
Other Names | STGB3NB60FDT4 STGB3NB60FDT4 497 2449 2 ND 49724492ND 497-2449-2 |