STGB18N40LZT4

IGBT Transistors EAS 180 mJ-400 V

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SeekIC No. : 00142505 Detail

STGB18N40LZT4: IGBT Transistors EAS 180 mJ-400 V

floor Price/Ceiling Price

US $ .73~1.13 / Piece | Get Latest Price
Part Number:
STGB18N40LZT4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~10
  • 10~100
  • 100~250
  • Unit Price
  • $1.13
  • $.91
  • $.82
  • $.73
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
View more price & deliveries
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Configuration : Single Collector- Emitter Voltage VCEO Max : 360 V
Maximum Gate Emitter Voltage : 12 V Maximum Operating Temperature : + 150 C
Package / Case : D2PAK-3 Packaging : Reel    

Description

Collector-Emitter Saturation Voltage :
Continuous Collector Current at 25 C :
Gate-Emitter Leakage Current :
Power Dissipation :
Maximum Operating Temperature : + 150 C
Configuration : Single
Collector- Emitter Voltage VCEO Max : 360 V
Packaging : Reel
Package / Case : D2PAK-3
Maximum Gate Emitter Voltage : 12 V


Parameters:

Technical/Catalog InformationSTGB18N40LZT4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Input TypeLogic
Voltage - Collector Emitter Breakdown (Max)420V
Current - Collector (Ic) (Max)30A
Vce(on) (Max) @ Vge, Ic1.7V @ 4.5V, 10A
Power - Max150W
Mounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)
PackagingTape & Reel (TR)
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STGB18N40LZT4
STGB18N40LZT4
497 7006 2 ND
49770062ND
497-7006-2



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