IGBT Transistors EAS 180 mJ-400 V
STGB18N40LZT4: IGBT Transistors EAS 180 mJ-400 V
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 360 V | ||
Maximum Gate Emitter Voltage : | 12 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | D2PAK-3 | Packaging : | Reel |
Technical/Catalog Information | STGB18N40LZT4 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Input Type | Logic |
Voltage - Collector Emitter Breakdown (Max) | 420V |
Current - Collector (Ic) (Max) | 30A |
Vce(on) (Max) @ Vge, Ic | 1.7V @ 4.5V, 10A |
Power - Max | 150W |
Mounting Type | Surface Mount |
Package / Case | D²Pak, TO-263 (2 leads + tab) |
Packaging | Tape & Reel (TR) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STGB18N40LZT4 STGB18N40LZT4 497 7006 2 ND 49770062ND 497-7006-2 |