IGBT Transistors N-channel MOSFET
STGB10NC60KT4: IGBT Transistors N-channel MOSFET
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ApplicationELECTRONIC IGNITIONLIGHT DIMMERSTATIC RELAYSSpecifications Symbol Parameter ...
Configuration : | Single | Collector- Emitter Voltage VCEO Max : | 600 V | ||
Maximum Gate Emitter Voltage : | +/- 20 V | Maximum Operating Temperature : | + 150 C | ||
Package / Case : | D2PAK-3 | Packaging : | Reel |
Technical/Catalog Information | STGB10NC60KT4 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Input Type | Standard |
Voltage - Collector Emitter Breakdown (Max) | 600V |
Current - Collector (Ic) (Max) | 20A |
Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 5A |
Power - Max | 60W |
Mounting Type | Surface Mount |
Package / Case | D²Pak, TO-263 (2 leads + tab) |
Packaging | Cut Tape (CT) |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STGB10NC60KT4 STGB10NC60KT4 497 5737 1 ND 49757371ND 497-5737-1 |