STE48NM50

Transistor Polarity : N-Channel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Gate-Source Breakdown Voltage : +/- 30 V
Continuous Drain Current : 48 A
Configuration : Single Dual Source
Resistance Drain-Source RDS (on) : 0.1 Ohms
Package / Case : ISOTOP


Features:

 TYPICAL R_DS(on) = 0.08W
 HIGH dv/dt AND AVALANCHE CAPABILITIES
 100% AVALANCHE TESTED
 LOW INPUT CAPACITANCE AND GATE CHARGE
 LOW GATE INPUT RESISTANCE
 TIGHT PROCESS CONTROL AND HIGH MANUFACTURING YIELDS


Application

The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value		Unit
VCES	Drain-source Voltage (VGS = 0)	500		V
VDGR	Drain- gate Voltage (RGS = 20 kW)	500		V
VGE	Gate-Emitter Voltage	± 30		V
ID	Drain Current (continuous) at TC = 25°C (Steady State)	48		A
ID	Drain Current (continuous) at TC = 100°C	30		A
IDM (*)	Drain Current (pulsed)	192		A
PTOT	Total Dissipation at TC = 25°C (Steady State)	450		W
	Derating Factor	3.6		KV
dv/dt (1)	Peak Diode Recovery voltage slope	15		V/ns
Tj	Operating Junction Temperature	- 65 to 150		°C
Tstg	Storage Temperature	150		°C

Description

The STE48NM50 MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company's PowerMESH™ horizontal layout. The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics. The adoption of the Company's proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition's products.