STE40NC60

Transistor Polarity : N-Channel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 40 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.13 Ohms
Configuration : Single Dual Source
Package / Case : ISOTOP


Features:

 TYPICAL R_DS(on) = 0.098 W
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 NEW HIGH VOLTAGE BENCHMARK
 GATE CHARGE MINIMIZED


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 SWITH MODE POWER SUPPLIES (SMPS)
 DC-AC CONVERTERS FOR WELDING EQUIPMENT AND
   UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVER


Specifications

Symbol	Parameter	Value		Unit
VCES	Drain-source Voltage (VGS = 0)	600		V
VDGR	Drain- gate Voltage (RGS = 20 kW)	600		V
VGE	Gate-Emitter Voltage	± 30		V
ID	Drain Current (continuous) at TC = 25°C (Steady State)	40		A
ID	Drain Current (continuous) at TC = 100°C	23		A
IDM (*)	Drain Current (pulsed)	160		A
PTOT	Total Dissipation at TC = 25°C (Steady State)	460		W
	Derating Factor	3.68		W/°C
dv/dt (1)	Peak Diode Recovery voltage slope	3		V/ns
VISO	Insulation Winthstand Voltage (AC-RMS)	2500		V
Tj	Operating Junction Temperature	- 65 to 150		°C
Tstg	Storage Temperature	150		°C

Description

The STE40NC60 PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness.