STE40NK90ZD

MOSFET N-Ch 900 Volt 40 Amp

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SeekIC No. : 00161617 Detail

STE40NK90ZD: MOSFET N-Ch 900 Volt 40 Amp

floor Price/Ceiling Price

Part Number:
STE40NK90ZD
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/23

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 900 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 40 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single Dual Source
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : ISOTOP Packaging : Tube    

Description

Transistor Polarity : N-Channel
Mounting Style : Through Hole
Maximum Operating Temperature : + 150 C
Packaging : Tube
Continuous Drain Current : 40 A
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 900 V
Resistance Drain-Source RDS (on) : 0.18 Ohms
Configuration : Single Dual Source
Package / Case : ISOTOP


Features:

 TYPICAL RDS(on) = 0.14
 EXTREMELY HIGH dv/dt CAPABILITY
 100% AVALANCHE TESTED
 GATE CHARGE MINIMIZED
 VERY LOW INTRINSIC CAPACITANCES
 VERY GOOD MANUFACTURING REPEATIBILITY



Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 IDEAL FOR WELDING EQUIPMENT



Specifications

Symbol
Parameter
Value
Unit
VCES
Drain-source Voltage (VGS = 0)
900
V

VDGR

Drain- gate Voltage (RGS = 20 kW)

900 

V

VGE
Gate-Emitter Voltage
± 30
V
ID
Drain Current (continuous) at TC = 25°C (Steady State)
Drain Current (continuous) at TC = 100°C
40
25
A
A
IDM (*)
Drain Current (pulsed)
160
A
PTOT
Total Dissipation at TC = 25°C (Steady State)
600
W
Ptot
Derating Factor
5
W/°C
VESD(G-S)
Gate source ESD(HBM-C=100pF, R=1.5k)
7
KV
dv/dt (1)
Peak Diode Recovery voltage slope
8
V/ns
VISO
Insulation Withstand Voltage (AC-RMS) from All Four
Terminals to External Heatsink

2500

V

Tj
Tstg

Operating Junction Temperature
Storage Temperature

- 65 to 150

°C




Description

The STE40NK90ZD SuperFREDMesh™ series is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh ™ products.




Parameters:

Technical/Catalog InformationSTE40NK90ZD
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeChassis Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)900V
Current - Continuous Drain (Id) @ 25° C40A
Rds On (Max) @ Id, Vgs180 mOhm @ 20A, 10V
Input Capacitance (Ciss) @ Vds 25000pF @ 25V
Power - Max600W
PackagingTube
Gate Charge (Qg) @ Vgs826nC @ 10V
Package / CaseISOTOP
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STE40NK90ZD
STE40NK90ZD
497 4337 5 ND
49743375ND
497-4337-5



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