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STD3NM60T4

MOSFET N-Ch 600 Volt 3 Amp Power MDmesh

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SeekIC No. : 00161272 Detail

STD3NM60T4: MOSFET N-Ch 600 Volt 3 Amp Power MDmesh

STD3NM60T4 Data Sheet

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Part Number:
STD3NM60T4
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 30 V Continuous Drain Current : 3 A
Resistance Drain-Source RDS (on) : 1.5 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Resistance Drain-Source RDS (on) : 1.5 Ohms
Drain-Source Breakdown Voltage : 600 V
Package / Case : TO-252
Continuous Drain Current : 3 A


Parameters:

Technical/Catalog InformationSTD3NM60T4
VendorSTMicroelectronics (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C3A
Rds On (Max) @ Id, Vgs1.5 Ohm @ 1.5A, 10V
Input Capacitance (Ciss) @ Vds 324pF @ 25V
Power - Max42W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs14nC @ 10V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureStandard
Lead Free StatusRequest Inventory Verification
RoHS StatusRequest Inventory Verification
Other Names STD3NM60T4
STD3NM60T4
497 3161 6 ND
49731616ND
497-3161-6



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