MOSFET N-CH 60V 30A
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 30 A | ||
Resistance Drain-Source RDS (on) : | 0.03 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | TO-252 | Packaging : | Tube |
Symbol | Parameter |
Value |
Unit |
VDS | Collector-Source Voltage (VGS = 0 V) |
60 |
V |
VDGR | Drain-gate Voltage (RGS = 20 k) |
60 |
V |
VGS | Gate-Source Voltage |
±20 |
V |
ID | Drain Current (continuous) at TC = 25 |
30 |
A |
ID | Drain Current (continuous) at TC = 100 |
21 |
A |
IDM (•) | Drain Current (pulsed) |
120 |
A |
PTOT | Total Dissipation at TC = 25 |
55 |
W |
Derating Factor |
0.37 |
W/ | |
dv/dt | Peak Diode Recovery voltage slope |
7 |
V/ns |
Tstg | Storage Temperature |
-65 to 175 |
|
Tj | Max. Operating Junction Temperature |
175 |
This STD30NE06 Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.