Position: Home  > All Categories> Integrated Circuits (ICs) > STD30NE06

STD30NE06

MOSFET N-CH 60V 30A

product image

STD30NE06 Picture
See larger image
SeekIC No. : 00165353 Detail

STD30NE06: MOSFET N-CH 60V 30A

STD30NE06 Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
STD30NE06
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/12/21

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.03 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 30 A
Package / Case : TO-252
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.03 Ohms


Features:

 ` TYPICAL RDS(on) = 0.025
 ` EXCEPTIONAL dv/dt CAPABILITY
 ` 100% AVALANCHE TESTED
 ` LOW GATE CHARGE 100 oC
 ` APPLICATION ORIENTED CHARACTERIZATION
 ` FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICES


Application

 · HIGH CURRENT, HIGH SPEED SWITCHING
 · SOLENOID AND RELAY DRIVERS
 · MOTOR CONTROL, AUDIO AMPLIFIERS
 · DC-DC & DC-AC CONVERTERS


Specifications

Symbol Parameter
Value
Unit
VDS Collector-Source Voltage (VGS = 0 V)
60
V
VDGR Drain-gate Voltage (RGS = 20 k)

60
V
VGS Gate-Source Voltage
±20
V
ID Drain Current (continuous) at TC = 25
30
A
ID Drain Current (continuous) at TC = 100
21
A
IDM (•) Drain Current (pulsed)
120
A
PTOT Total Dissipation at TC = 25
55
W
  Derating Factor
0.37
W/
dv/dt Peak Diode Recovery voltage slope
7
V/ns
Tstg Storage Temperature
-65 to 175
Tj Max. Operating Junction Temperature
175
(`) Pulse width limited by safe operating area
(1) ISD 20 A, di/dt 300 A/ms, VDD V(BR)DSS, TjTJMAX


Description

This STD30NE06 Power Mosfet is the latest development of SGS-THOMSON unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalance characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Sensors, Transducers
GP2Y0D340K
PAN3509DH-TXWA
Inductors, Coils, Chokes
DR127-330-R
SD53-100-R
Circuit Protection
A50QS75-4Y
F-17*77
Filters
PICO2205A
PICO2204A
Kits
IT243
UVSC-110-4E1
Programmers, Development Systems
ARDUINO IIC/I2C 液晶模块
JTAG-SMT2
View more