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STD30NE06LT4

MOSFET N-Ch 60 Volt 30 Amp

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SeekIC No. : 00161148 Detail

STD30NE06LT4: MOSFET N-Ch 60 Volt 30 Amp

STD30NE06LT4 Data Sheet

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Part Number:
STD30NE06LT4
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/4

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 30 A
Resistance Drain-Source RDS (on) : 0.022 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : TO-252 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Continuous Drain Current : 30 A
Package / Case : TO-252
Drain-Source Breakdown Voltage : 60 V
Resistance Drain-Source RDS (on) : 0.022 Ohms


Parameters:

Technical/Catalog InformationSTD30NE06LT4
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C30A
Rds On (Max) @ Id, Vgs28 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 2370pF @ 25V
Power - Max55W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs41nC @ 5V
Package / CaseDPak, SC-63, TO-252 (2 leads+tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STD30NE06LT4
STD30NE06LT4



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