STC5NF30V

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 5 A
Package / Case : TSSOP-8
Resistance Drain-Source RDS (on) : 0.027 Ohms
Configuration : Dual Dual Source


Features:

 `  TYPICAL R<sub>DS(on)</sub> = 0.027 @ 4.5 V
 `  TYPICAL R_DS(on) = 0.031 @ 2.7 V
 `  ULTRA LOW THRESHOLD GATE DRIVE (2.7 V)
 `  STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY


Application

·  DC MOTOR DRIVE
·  DC-DC CONVERTERS
·  BATTERY MANAGEMENT IN NOMADIC EQUIPMENT
·  POWER MANAGEMENT IN PORTABLE/DESKTOP PCs


Pinout




Specifications

Symbol	Parameter	Value	Unit
VDS	Collector-Source Voltage (VGS = 0 V)	20	V
VDGR	Drain-gate Voltage (RGS = 20 k)	20	V
VGS	Gate-Source Voltage	±12	V
ID	Drain Current (continuous) at TC = 25	5	A
ID	Drain Current (continuous) at TC = 100	3	A
IDM(`)	Drain Current (pulsed)	20	A
Ptot	Total Dissipation at TC = 25	1.5	W

(`) Pulse width limited by safe operating area.


Description

This Power MOSFET STC5NF30V is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.