Transistors Bipolar (BJT) Hybrid emitter transistor ESBT
STC08DE150HP: Transistors Bipolar (BJT) Hybrid emitter transistor ESBT
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Packaging : | Tube |
Symbol |
Parameter |
Value |
Unit |
VCS(SS) |
Collector-source voltage (VBS =VGS =0V) |
1500 |
V |
VBS(OS) |
Base-source voltage (IC =0, VGS =0V) |
300 |
V |
VSB(OS) |
Source-base voltage (IC =0, VGS =0V) |
9 |
V |
VGS |
Gate-source voltage |
± 20 |
V |
IC |
Collector current |
8 |
A |
ICM |
Collector peak current (tP < 5ms) |
15 |
A |
IB |
Base current |
4 |
A |
IBM |
Base peak current (tP < 1ms) |
8 |
A |
Ptot |
Total dissipation at Tc 25°C |
42 |
W |
Tstg |
Storage temperature |
-40 to 150 |
°C |
TJ |
Max. operating junction temperature |
125 |
°C |
The STC08DE150HP is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed at providing the best performance in ESBT topology.
The STC08DE150HP is designed for use in aux flyback smps for any three phase application.
Technical/Catalog Information | STC08DE150HP |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Applications | Gate Driver |
Transistor Type | NPN - Emitter Switched Bipolar |
Voltage - Rated | 1500V (1.5kV) |
Current Rating | 8A |
Package / Case | TO-247 |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STC08DE150HP STC08DE150HP 497 7003 5 ND 49770035ND 497-7003-5 |