Transistors Bipolar (BJT) Bipolar Transistor
STC03DE150: Transistors Bipolar (BJT) Bipolar Transistor
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Transistors Bipolar (BJT) Hybrid emitter trans ESBT 2200V 3A 0.33
Packaging : | Tube |
Symbol | Parameter |
Value |
Unit |
VCS(SS) | Collector-Source Voltage (VBS = VGS = 0 V) |
1500 |
V |
VBS(OS) | Base-Source Voltage (IC= 0, VGS = 0 V) |
30 |
V |
VSB(OS) | Source-Base Voltage (IC= 0, VGS = 0 V) |
9 |
V |
VGS | Gate-Source Voltage |
±20 |
V |
IC | Collector Current |
3 |
A |
ICM | Collector Peak Current (tp < 5ms) |
6 |
A |
IB | Base Current |
2 |
A |
IBM | Base Peak Current (tp < 1ms) |
4 |
A |
Ptot | Total Dissipation at TC = 25 |
100 |
W |
Tstg | Storage Temperature |
-65 to 125 |
|
TJ | Max. Operating Junction Temperature |
125 |
The STC03DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE150 is designed for use in aux flyback smps for any three phase application.
Technical/Catalog Information | STC03DE150 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Applications | - |
Transistor Type | NPN - Emitter Switched Bipolar |
Voltage - Rated | 1500V (1.5kV) |
Current Rating | 3A |
Package / Case | TO-247-4 |
Packaging | Tube |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STC03DE150 STC03DE150 497 4326 5 ND 49743265ND 497-4326-5 |