MOSFET N-Ch 600 Volt 7 Amp
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ApplicationSPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecif...
ApplicationSPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecif...
Application·SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpeci...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 7 A | ||
Resistance Drain-Source RDS (on) : | 950 mOhms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | STB9NK60ZDT4 |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 7A |
Rds On (Max) @ Id, Vgs | 950 mOhm @ 3.5A, 10V |
Input Capacitance (Ciss) @ Vds | 1110pF @ 25V |
Power - Max | 125W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 53nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB9NK60ZDT4 STB9NK60ZDT4 497 4325 1 ND 49743251ND 497-4325-1 |