Application·SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecifications Symbol Parameter Max. Units VDS Drain-source Voltage (VGS = 0) 30 V VDGR Drain-gate Voltage (RGS = 20 kW) 30 V VGS Gate- source Voltage ± 16 A ...
STB90NF3LL: Application·SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecifications Symbol Parameter Max. Units VDS Drain-source Voltage (VGS = 0) 30 ...
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ApplicationSPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecif...
ApplicationSPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERSSpecif...
Symbol |
Parameter |
Max. |
Units |
VDS | Drain-source Voltage (VGS = 0) |
30 |
V |
VDGR | Drain-gate Voltage (RGS = 20 kW) |
30 |
V |
VGS | Gate- source Voltage |
± 16 |
A |
ID(#) | Drain Current (continuous) at TC = 25°C |
80 |
A |
ID | Drain Current (continuous) at TC = 100°C |
80 |
A |
IDM(·) | Drain Current (pulsed) |
320 |
W |
Ptot | Total Dissipation at TC = 25°C |
200 |
W |
Derating Factor |
1.3 |
W/°C | |
Tstg | Storage Temperature |
-55 to + 150 |
°C |
Tj | Max. Operating Junction Temperature |
This application specific Power MOSFET STB90NF3LL is the third genaration of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance.