STB95NF03

Application

HIGH CURRENT, HIGH SPEED SWITCHING
DC-DC & DC-AC CONVERTERS
SOLENOID AND RELAY DRIVERS


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain-gate Voltage (RGS = 20 kΩ)	30	V
VGS	Gate- source Voltage	± 20	V
ID(*)	Drain Current (continuous) at TC = 25	80	A
ID	Drain Current (continuous) at TC = 100	80	A
IDM(•)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at TC = 25	150	W
	Derating Factor	1	W/
dv/dt (1)	Peak Diode Recovery voltage slope	3.0	V/ns
EAS (2)	Single Pulse Avalanche Energy	720	mJ
Tstg	Storage Temperature	-55 to 175
Tj	Operating Junction Temperature

Description

This Power MOSFET STB95NF03 is the latest development ofSTMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remark-able manufacturing reproducibility.