STB8NM60T4, US $ 1.23-1.91 , STMicroelectronics, STB8NM60T4 DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00151387 Detail

STB8NM60T4: MOSFET N-Ch 650 Volt 5 Amp

STB8NM60T4 Data Sheet

US $ 1.23~1.91 / Piece | Get Latest Price

Part Number:: STB8NM60T4
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 30 V	Continuous Drain Current :	8 A
Resistance Drain-Source RDS (on) :	0.9 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Gate-Source Breakdown Voltage : +/- 30 V
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 8 A
Resistance Drain-Source RDS (on) : 0.9 Ohms

Parameters:

Technical/Catalog Information	STB8NM60T4
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	8A
Rds On (Max) @ Id, Vgs	1 Ohm @ 2.5A, 10V
Input Capacitance (Ciss) @ Vds	400pF @ 25V
Power - Max	100W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	18nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB8NM60T4 STB8NM60T4 497 5386 2 ND 49753862ND 497-5386-2

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STB8NM60T4

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