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STB80NE03L-06

ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL,AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERSAUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)Specifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) ...

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STB80NE03L-06: ApplicationHIGH CURRENT, HIGH SPEED SWITCHINGSOLENOID AND RELAY DRIVERSMOTOR CONTROL,AUDIO AMPLIFIERSDC-DC & DC-AC CONVERTERSAUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)Sp...

STB80NE03L-06 Data Sheet

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Part Number:
STB80NE03L-06
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Application

HIGH CURRENT, HIGH SPEED SWITCHING
 SOLENOID AND RELAY DRIVERS
 MOTOR CONTROL,AUDIO AMPLIFIERS
 DC-DC & DC-AC CONVERTERS
 AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc.)




Specifications

Symbol
Parameter
Value
Unit
VDS
 Drain-source Voltage (VGS = 0)
30
V
VDGR
 Drain- gate Voltage (RGS = 20k)
30
V
VGS
 Gate-source Voltage
±20
V
ID
 Drain Current (continuous) at Tc = 25 oC
80
A
ID
 Drain Current (continuous) at Tc = 100 oC
66
A
IDM(•)
 Drain Current (pulsed)
320
A
Ptot
 Total Dissipation at Tc = 25 oC
300
W
 Derating Factor
150
W/oC
dv/dt (1)
 Peak Diode Recovery voltage slope
1
V/ns
Tstg
 Storage Temperature
7
oC
Tj
 Max. Operating Junction Temperature
-55 to 175



Description

This STB80NE03L-06 Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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