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STB80NF55-06-1

MOSFET N-Ch, 55V-0.005ohms 80A

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SeekIC No. : 00156317 Detail

STB80NF55-06-1: MOSFET N-Ch, 55V-0.005ohms 80A

STB80NF55-06-1 Data Sheet

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US $ .96~1.07 / Piece | Get Latest Price
Part Number:
STB80NF55-06-1
Mfg:
STMicroelectronics
Supply Ability:
5000

Price Break

  • Qty
  • 0~650
  • 650~1000
  • Unit Price
  • $1.07
  • $.96
  • Processing time
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.0065 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Tube
Continuous Drain Current : 80 A
Drain-Source Breakdown Voltage : 55 V
Package / Case : I2PAK
Resistance Drain-Source RDS (on) : 0.0065 Ohms


Parameters:

Technical/Catalog InformationSTB80NF55-06-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs6.5 mOhm @ 40A, 10V
Input Capacitance (Ciss) @ Vds 4400pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs189nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB80NF55 06 1
STB80NF55061



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