STB80NF03L-04

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Drain-Source Breakdown Voltage : 30 V
Package / Case : D2PAK
Packaging : Tube
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.004 Ohms


Application

 HIGH CURRENT, HIGH SPEED SWITCHING
 MOTOR CONTROL, AUDIO AMPLIFIERS
DC-DC & DC-AC CONVERTERS
AUTOMOTIVE ENVIRONMENT (INJECTION, ABS, AIR-BAG, LAMPDRIVERS, Etc. )


Specifications

Symbol	Parameter	Value	Unit
VDS	Drain-source Voltage (VGS = 0)	30	V
VDGR	Drain- gate Voltage (RGS = 20 k)	30	V
VGS	Gate-source Voltage	± 20	V
ID	Drain Current (continuous) at Tc = 25	80	A
ID	Drain Current (continuous) at Tc = 100	56	A
IDM(•)	Drain Current (pulsed)	320	A
Ptot	Total Dissipation at Tc = 25	210	W
	Derating Factor	1.43	W/oC
dv/dt	Peak Diode Recovery voltage slope	3.5	m/J
Tstg	Storage Temperature	-65 to 175	oC
Tj	Max. Operating Junction Temperature	175	oC

Description

This STB80NF03L-04 Power Mosfet is the latest development of STMicroelectronics unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing
reproducibility.