STB25NM50N-1

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 500 V
Package / Case : I2PAK
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 21.5 A
Resistance Drain-Source RDS (on) : 0.14 Ohms


Features:

· HIGH dv/dt AND AVALANCHE CAPABILITIES
· 100% AVALANCHE TESTED
· LOW INPUT CAPACITANCE AND GATE CHARGE
· LOW GATE INPUT RESISTANCE


Application

The MDmesh™ II family is very suitable for increasing power density of high voltage converters allowing system  iniaturization and higher efficiencies.

Specifications

Symbol	Parameter	Value		Unit
		TO- 220/D²PAK/ I²PAK/TO-247	TO-220FP
VDS	Drain-source Voltage (VGS = 0)	500		V
VDGR	Drain-gate Voltage (RGS = 20 k)	500		V
VGS	Gate- source Voltage	± 25		V
ID	Drain Current (continuos) at TC = 25	22	22(*)	A
ID	Drain Current (continuos) at TC = 100	14	14(*)	A
IDM()	Drain Current (pulsed)	88	88(*)	A
PTOT	Total Dissipation at TC = 25	160	40	W
	Derating Factor	1.28	0.32	W/
dv/dt (1)	Peak Diode Recovery voltage slope	15		V/ns
Tstg	Storage Temperature	55 to 150
Tj	Max. Operating Junction Temperature	150

() Pulse width limited by safe operating area
(1) I_SD 22A, di/dt 400A/s, V_DD 80% V_(BR)DSS.
(*) Limited only by maximum temperature allowed


Description

The STB25NM50N-1 STx25NM50N is realized with the second generation of MDmesh Technology. This revolutionary MOSFET  ssociates a new vertical structure to the Company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

Parameters:

Technical/Catalog Information	STB25NM50N-1
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	500V
Current - Continuous Drain (Id) @ 25° C	22A
Rds On (Max) @ Id, Vgs	140 mOhm @ 11A, 10V
Input Capacitance (Ciss) @ Vds	2565pF @ 25V
Power - Max	160W
Packaging	Tube
Gate Charge (Qg) @ Vgs	84nC @ 10V
Package / Case	I²Pak, TO-262 (3 straight leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB25NM50N 1 STB25NM50N1 497 5729 ND 4975729ND 497-5729