MOSFET N-Ch, 40V-0.0035ohms 120A
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Features: ` TYPICAL RDS(on) = 0.0032` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· ...
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 40 V | ||
Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 120 A | ||
Resistance Drain-Source RDS (on) : | 0.0031 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 175 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | STB200N4F3 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 40V |
Current - Continuous Drain (Id) @ 25° C | 120A |
Rds On (Max) @ Id, Vgs | 4 mOhm @ 80A, 10V |
Input Capacitance (Ciss) @ Vds | 5100pF @ 25V |
Power - Max | 300W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 75nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB200N4F3 STB200N4F3 |