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STB200NF03

Features: ` TYPICAL RDS(on) = 0.0032` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SWITCHING SPEED· DC-DC & DC-AC CONVERTERS· SOLENOID AND RELAY DRIVERSSpecifications Symbol Parameter Value Unit VDS Drain-source Voltage (VGS = 0) 30 V ...

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SeekIC No. : 004507121 Detail

STB200NF03: Features: ` TYPICAL RDS(on) = 0.0032` STANDARD THRESHOLD DRIVE` 100% AVALANCHE TESTEDApplication· HIGH CURRENT, HIGH SWITCHING SPEED· DC-DC & DC-AC CONVERTERS· SOLENOID AND RELAY DRIVERSSpecific...

STB200NF03 Data Sheet

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Part Number:
STB200NF03
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Description



Features:

`  TYPICAL RDS(on) = 0.0032
`  STANDARD THRESHOLD DRIVE
`  100% AVALANCHE TESTED


Application

·  HIGH CURRENT, HIGH SWITCHING SPEED
·  DC-DC & DC-AC CONVERTERS
·  SOLENOID AND RELAY DRIVERS


Specifications

Symbol Parameter
Value
Unit
VDS Drain-source Voltage (VGS = 0)
30
V
VDGR Drain-gate Voltage (RGS = 20 k)
30
V
VGS Gate- source Voltage
±20
V
ID(**) Drain Current (continuos) at TC = 25
120
A
ID Drain Current (continuos) at TC = 100
120
A
IDM() Drain Current (pulsed)
480
A
PTOT Total Dissipation at TC = 25
300
W
  Derating Factor
2.0
W/
dv/dt (1) Peak Diode Recovery voltage slope
1.5
V/ns
EAS(2) Single Pulse Avalanche Energy
1.45
J
Tstg Storage Temperature
55 to 175
Tj Max. Operating Junction Temperature
() Pulse width limited by safe operating area
(**) Current Limited by Package
(1) ISD120A, di/dt400A/s, VDD V(BR)DSS, Tj TJMAX
(2) Starting Tj = 25 , ID = 60 A, VDD = 25 V


Description

This Power MOSFET STB200NF03 is the latest development of STMicroelectronis unique "Single Feature Size™" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.




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