STB24NM65N, US $ 3.14-4.63 , STMicroelectronics, STB24NM65N DataSheet download, circuit diagram from SeekIC.com

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STB24NM65N: MOSFET N-Channel 650V 0.16 Ohms 19A

STB24NM65N Data Sheet

US $ 3.14~4.63 / Piece | Get Latest Price

Part Number:: STB24NM65N
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	650 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	19 A
Resistance Drain-Source RDS (on) :	0.16 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Drain-Source Breakdown Voltage : 650 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 19 A
Gate-Source Breakdown Voltage : +/- 25 V
Resistance Drain-Source RDS (on) : 0.16 Ohms

Parameters:

Technical/Catalog Information	STB24NM65N
Vendor	STMicroelectronics
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	650V
Current - Continuous Drain (Id) @ 25° C	19A
Rds On (Max) @ Id, Vgs	190 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds	2500pF @ 50V
Power - Max	160W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB24NM65N STB24NM65N 497 7002 2 ND 49770022ND 497-7002-2

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STB24NM65N

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