MOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOS
STB23NM60ND: MOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOS
SeekIC Buyer Protection PLUS - newly updated for 2013!
268 Transactions
All payment methods are secure and covered by SeekIC Buyer Protection PLUS.
Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 19.5 A | ||
Resistance Drain-Source RDS (on) : | 0.18 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | STB23NM60ND |
Vendor | STMicroelectronics (VA) |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 19.5A |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 2050pF @ 50V |
Power - Max | 150W |
Packaging | Digi-Reel? |
Gate Charge (Qg) @ Vgs | 70nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB23NM60ND STB23NM60ND 497 8472 6 ND 49784726ND 497-8472-6 |