STB23NM60ND, US $ 2.75-4.07 , STMicroelectronics, STB23NM60ND DataSheet download, circuit diagram from SeekIC.com

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SeekIC No. : 00150247 Detail

STB23NM60ND: MOSFET N-CH 600V 0.150 Ohm 19.5A FDmesh II MOS

STB23NM60ND Data Sheet

US $ 2.75~4.07 / Piece | Get Latest Price

Part Number:: STB23NM60ND
Mfg:: STMicroelectronics
Supply Ability:: 5000

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$4.07
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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	19.5 A
Resistance Drain-Source RDS (on) :	0.18 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Resistance Drain-Source RDS (on) : 0.18 Ohms
Gate-Source Breakdown Voltage : +/- 25 V
Continuous Drain Current : 19.5 A

Parameters:

Technical/Catalog Information	STB23NM60ND
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	19.5A
Rds On (Max) @ Id, Vgs	180 mOhm @ 10A, 10V
Input Capacitance (Ciss) @ Vds	2050pF @ 50V
Power - Max	150W
Packaging	Digi-Reel?
Gate Charge (Qg) @ Vgs	70nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB23NM60ND STB23NM60ND 497 8472 6 ND 49784726ND 497-8472-6

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STB23NM60ND

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