MOSFET N-Channel 600V Power MDmesh
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 25 V | Continuous Drain Current : | 19 A | ||
Resistance Drain-Source RDS (on) : | 0.18 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | STB23NM60N |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 19A |
Rds On (Max) @ Id, Vgs | 180 mOhm @ 9.5A, 10V |
Input Capacitance (Ciss) @ Vds | 2050pF @ 50V |
Power - Max | 150W |
Packaging | Cut Tape (CT) |
Gate Charge (Qg) @ Vgs | 60nC @ 10V |
Package / Case | D²Pak, TO-263 (2 leads + tab) |
FET Feature | Logic Level Gate |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB23NM60N STB23NM60N 497 7943 1 ND 49779431ND 497-7943-1 |