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STB23NM60N

MOSFET N-Channel 600V Power MDmesh

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SeekIC No. : 00162550 Detail

STB23NM60N: MOSFET N-Channel 600V Power MDmesh

STB23NM60N Data Sheet

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Part Number:
STB23NM60N
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • 1~5000
  • Unit Price
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  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.18 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 19 A
Resistance Drain-Source RDS (on) : 0.18 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Parameters:

Technical/Catalog InformationSTB23NM60N
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C19A
Rds On (Max) @ Id, Vgs180 mOhm @ 9.5A, 10V
Input Capacitance (Ciss) @ Vds 2050pF @ 50V
Power - Max150W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs60nC @ 10V
Package / CaseD²Pak, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB23NM60N
STB23NM60N
497 7943 1 ND
49779431ND
497-7943-1



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