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STB21NM60N: MOSFET N-Ch 600 V 0.19 Ohm 17 A 2nd Gen MDmesh

STB21NM60N Data Sheet

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Part Number:: STB21NM60N
Mfg:: STMicroelectronics
Supply Ability:: 5000

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Upload time: 2024/11/21

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	600 V
Gate-Source Breakdown Voltage :	+/- 25 V	Continuous Drain Current :	17 A
Resistance Drain-Source RDS (on) :	0.19 Ohms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	D2PAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 600 V
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.19 Ohms
Gate-Source Breakdown Voltage : +/- 25 V

Parameters:

Technical/Catalog Information	STB21NM60N
Vendor	STMicroelectronics (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	600V
Current - Continuous Drain (Id) @ 25° C	17A
Rds On (Max) @ Id, Vgs	220 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds	1900pF @ 50V
Power - Max	140W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	66nC @ 10V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Standard
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	STB21NM60N STB21NM60N 497 5002 1 ND 49750021ND 497-5002-1

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STB21NM60N

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