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STB21NM60N-1

MOSFET N-CHANNEL MFT

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SeekIC No. : 00160465 Detail

STB21NM60N-1: MOSFET N-CHANNEL MFT

STB21NM60N-1 Data Sheet

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Part Number:
STB21NM60N-1
Mfg:
STMicroelectronics
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 600 V
Gate-Source Breakdown Voltage : +/- 25 V Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.22 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : I2PAK Packaging : Tube    

Description

Transistor Polarity : N-Channel
Configuration : Single
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 150 C
Packaging : Tube
Drain-Source Breakdown Voltage : 600 V
Package / Case : I2PAK
Continuous Drain Current : 17 A
Resistance Drain-Source RDS (on) : 0.22 Ohms
Gate-Source Breakdown Voltage : +/- 25 V


Parameters:

Technical/Catalog InformationSTB21NM60N-1
VendorSTMicroelectronics
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25° C17A
Rds On (Max) @ Id, Vgs220 mOhm @ 8.5A, 10V
Input Capacitance (Ciss) @ Vds 1900pF @ 50V
Power - Max140W
PackagingTube
Gate Charge (Qg) @ Vgs66nC @ 10V
Package / CaseI²Pak, TO-262 (3 straight leads + tab)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names STB21NM60N 1
STB21NM60N1
497 5728 ND
4975728ND
497-5728



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