MOSFET N-Ch 600 Volt 20 Amp
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Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 600 V | ||
Gate-Source Breakdown Voltage : | +/- 30 V | Continuous Drain Current : | 20 A | ||
Resistance Drain-Source RDS (on) : | 0.29 Ohms | Configuration : | Single | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | D2PAK | Packaging : | Reel |
Technical/Catalog Information | STB20NM60T4 |
Vendor | STMicroelectronics |
Category | Discrete Semiconductor Products |
Mounting Type | Surface Mount |
FET Polarity | N-Channel |
Drain to Source Voltage (Vdss) | 600V |
Current - Continuous Drain (Id) @ 25° C | 20A |
Rds On (Max) @ Id, Vgs | 290 mOhm @ 10A, 10V |
Input Capacitance (Ciss) @ Vds | 1500pF @ 25V |
Power - Max | 192W |
Packaging | Tape & Reel (TR) |
Gate Charge (Qg) @ Vgs | 54nC @ 10V |
Package / Case | D²Pak, SMD-220, TO-263 (2 leads + tab) |
FET Feature | Standard |
Drawing Number | * |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | STB20NM60T4 STB20NM60T4 497 5384 2 ND 49753842ND 497-5384-2 |